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    Black Lithium Niobate wafer
    Black Lithium Niobate waferBlack Lithium Niobate waferBlack Lithium Niobate wafer
    Black Lithium Niobate waferBlack Lithium Niobate waferBlack Lithium Niobate wafer

    Black Lithium Niobate wafer

    COT is proud to announce that we can offer 3", 4", 6" and 8" black LN wafers for all cutting angles!

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    The reduction technique is used to produce black lithium niobate (LiNbO3), which has a high ability to neutralize charges even if the electric potential occurs instantaneously. The pyroelectric effect of LN wafer is almost eliminated and the transmittance is significantly reduced. The piezoelectric properties of black lithium niobate wafers are no different from those of standard wafers. Therefore, black reduced lithium niobate wafers are widely used to produce higher frequency surface acoustic wave devices.

    Free-pyro black LiNbO3 and LiTaO3 wafers were prepared successfully by chemical reduction under a mixed atmosphere of CO2 and H2. Bulk conductivity and optical transmittance of the black LiNbO3 and black LiTaO3 wafers were measured. The results showed that the pyroelectric effect for the reduced wafers was almost eliminated and the transmittance decreased considerably. The reduction process did not change Curie temperatures or piezoelectric properties of LN and LT wafers, while neutralize electrical charges even if the electrical potential occurs instantaneously.

    The reduction technology is used to produce Black Lithium Niobate (LiNbO3) which has high ability to neutralize electrical charges even if the electrical potential occurs instantaneously. Black Lithium Niobate shows no difference in piezoelectric properties from standard wafers. As a result, black reduced lithium niobate wafers are widely adopted to produce higher frequency SAW devices. 

    MaterialBlack Lithium Niobate Wafer
    Curie Temp1142±2.0℃
    Cutting AngleX/Y/Z/Y36/Y41/Y64/Y128/etc
    Diameter/size3”/4”/6" & 8" LN wafer
    Tol(±)<0.20 mm
    Thickness0.18 ~ 0.5mm or more
    Primary Flat22mm /32mm /42.5mm /57.5mm /semi notch
    LTV (5mmx5mm) <1µm
    TTV <3µm
    Bow-30<bow<30
    Warp<40µm
    PLTV(<0.5um)≥95%(5mm*5mm)
    Surface TypeSingle Side Polished /Double Sides Polished
    Polished side Ra<0.5nm
    Back Side CriteriaGeneral is 0.2-0.5µm or as customized
    Edge CriteriaR=0.2mm or Bullnose
    Wafer Surface CriteriaTransmissivitygeneral:5.9x10-11<s<2.0*10-10 at 25℃
    Contamination,None
    Particles ¢>0.3 µ  m<= 30
    Scratch , ChippingNone
    DefectNo edge cracks, scratches, saw marks, stains
    PackagingQty/Wafer box25pcs per box 


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