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    Lithium Niobate on Insulator Substrates LNOI

    Lithium Niobate on Insulator Substrates LNOI

    Lithium Niobate Thin Films on Insulator is kind of POI (Piezoelectric on Insulator) wafer. It's stacked sequence structure is made of support substrates that can be silicon, quartz, fused silica, sapphire or LN wafer, the interlayer is thermal oxide SiO2 that works as insulator

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    Lithium Niobate Thin Films on Insulator is kind of POI (Piezoelectric on Insulator) wafer. It’s stacked sequence structure is made of support substrates that can be silicon, quartz, fused silica, sapphire or LN wafer, the interlayer is thermal oxide SiO2 that works as insulator and lithium niobate film is the functional layer above the insulation layer.

    POI /LNOI engineered substrates enable the design of filters with high quality factor, large bandwidth, very low temperature sensitivity and low insertion loss with a simple device manufacturing technology. These wafers are developed and used for high-speed modulators, high Q factor SAW devices, IR-detectors, THz devices.

    We work with our strategical partner who has experienced at technology of smart cut and wafer bonding and supply with important Piezoelectric layer on LN/LT from the sizes of 3” 4” 6” up to 8” to build the special wafer with multilayered structure.



    Specifications For LNOI 

    Layers

    Parameters

    Specifications

    Top Functional Layer

    Material

    Lithium Niobate    Lithium Tantanlate

    Diameter

    3"

    4"

    6"

    8"

    Surface orientation

    X-cut or per request

    Primary flat oritentation


    per request


    deg(°)

    Secondary flat orientation


    per request



    Film Thickness average thickness


    300-600


    nm

    Front side /face roughness

    Optical polished

    Isolation Layer

    Buried Oxide avg thickness

    4600

    4700

    4800

    nm

    Buried Oxide thickness uniformity

    -5

    0

    5

    %

    Support substrate

    Material

    SI/LN/SAPPHIRE/QUARTZ/ETC

    Diameter

    3"

    4"

    6"

    8"

    Support layer total thickness

    525

    525

    625

    725

    Device growth method

    CZ

    CZ

    ZVD

    hydrothermal

    Device orientation

    {100}


    0.5

    deg(°)

    Device doping type

    N

    N



    Device dopant


    Phos



    Surface finish



    10

    nm



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